Read the passage and answer the following questions :
The physics of semiconductor devices is dependent on the physics of semiconductors itself. The most important semiconductors are Germanium, Silicon and Gallium Arsenide. The GaAs has different properties than Silicon or Germanium. Pure silicon is intrinsic and contains negligibly small amount of impurities. Each silicon atom shares its four valance electrons with the four neighbouring atoms forming covalent bonds. An extrinsic silicon is achieved by introducing the impurities. The band structure of a solid can be obtained by solving a Schrodinger equation of an approximate one electron problem.
The question asks to identify the correct expression for the **law of mass action** in semiconductors, based on the provided options and context about semiconductor physics.
The law of mass action describes the relationship between the concentration of electrons ($n$) and holes ($p$) in a semiconductor material. It is a fundamental principle in semiconductor physics.
Therefore, according to the provided correct answer, the law of mass action in a semiconductor is represented by the equation:
$n \cdot p = n_i$
This equation relates the electron concentration ($n$) and hole concentration ($p$) to the intrinsic carrier concentration ($n_i$) in the semiconductor material.
Which of the following IS a pentavalent impurity?
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
The outermost orbit of a Germanium atom has ________ electrons.
P-type extrinsic semiconductor doped with impurity having how much valence electron?
All semiconductors in their last orbit have