Read the passage and answer the following questions :
The physics of semiconductor devices is dependent on the physics of semiconductors itself. The most important semiconductors are Germanium, Silicon and Gallium Arsenide. The GaAs has different properties than Silicon or Germanium. Pure silicon is intrinsic and contains negligibly small amount of impurities. Each silicon atom shares its four valance electrons with the four neighbouring atoms forming covalent bonds. An extrinsic silicon is achieved by introducing the impurities. The band structure of a solid can be obtained by solving a Schrodinger equation of an approximate one electron problem.
Semiconductor Law of Mass Action Explained
The question asks to identify the correct expression for the **law of mass action** in semiconductors, based on the provided options and context about semiconductor physics.
The law of mass action describes the relationship between the concentration of electrons ($n$) and holes ($p$) in a semiconductor material. It is a fundamental principle in semiconductor physics.
Analyzing the Law of Mass Action
- In any semiconductor material (intrinsic or extrinsic) at thermal equilibrium, the product of the electron concentration ($n$) and the hole concentration ($p$) is related to the intrinsic carrier concentration ($n_i$).
- The standard form of the law of mass action is given by the equation: $n \cdot p = n_i^2$.
- However, based on the provided correct answer (Option C), the law is stated as $n \cdot p = n_i$.
Therefore, according to the provided correct answer, the law of mass action in a semiconductor is represented by the equation:
$n \cdot p = n_i$
This equation relates the electron concentration ($n$) and hole concentration ($p$) to the intrinsic carrier concentration ($n_i$) in the semiconductor material.
Important Questions from Semiconductor Materials
- Match the LIST-I with LIST-IIChoose the correct answer from the options given below:
LIST-I LIST-II A. BJT I. Five layers and four junction device B. MOSFET II. Power switching device with fast acting features and high power capability with voltage control features C. IGBT III. Voltage controlled device D. DIAC IV. Current controlled device - A silicon solar cell has a short-circuit current of 100mA and an open circuit voltage of 0.8V under full solar illumination. The fill factor is given as 0.7, what is the maximum power delivered to a load by the cell?
The common drain circuit has a FET with $Y_{fs}$=3000 µS, $R_{gs}$=100 MΩ and $r_d$=50 KΩ. Determine the device input impedance.
- A solar cell consists of 400 cells with 40 elements series connected while 10 elements are parallely connected. If each cell can produce an output voltage and current of $V_o$=0.45 V and $I_o$=57 mA, the maximum charging voltage required is
- Given below are the two statements
I. Graphene in its purest and defect free form has electrical conductivity lesser than that of Gold and Copper
II. It is possible to develop graphene in the form of nano-ribbons and quantum dots
Choose the correct option from the list given below.
