The phenomenon of $dv/dt$ triggering in thyristors occurs when the rapid rise in forward voltage across the device causes a charging current through the junction capacitance ($C_{J2}$). If this charging current ($I_{ch}$) reaches the thyristor's holding current level, it can trigger the device even without a gate pulse.
The relationship between the charging current, junction capacitance, and the rate of voltage change is defined by the formula:
$I_{ch} = C_{J2} \times \frac{dv}{dt}$
To determine the junction capacitance ($C_{J2}$), we rearrange the formula:
$C_{J2} = \frac{I_{ch}}{\frac{dv}{dt}}$
Using the given parameters and the target answer, the calculation proceeds as follows:
Substitute these values into the formula:
$C_{J2} = \frac{15 \times 10^{-3} \text{ A}}{75 \times 10^6 \text{ V/s}}$
$C_{J2} = \frac{15}{75} \times 10^{-3 - 6} \text{ F}$
$C_{J2} = 0.2 \times 10^{-9} \text{ F}$
$C_{J2} = 200 \times 10^{-12} \text{ F}$
$C_{J2} = 200 \text{ pF}$
This result corresponds to Option A.
In a semiconductor diode, the cut-in voltage is the voltage:
The leakage current in a pn junction is of the order of:
Diode junction breakdowns above 5 V are caused by:
The width of the depletion layer in a P-N junction diode
ln a p-n junction diode the forward current