List - I List - II a. Si-band gap i. 3.3 eV b. Ge-band gap ii. 1.12 eV c. Ga As band gap iii. 0.7 eV d. Si C band gap iv. 1.43 eV
Codes :
The task is to match semiconductors listed in List I with their corresponding band gap energies from List II.
Based on Option D, the matching is as follows:
| List I (Semiconductor) | List II (Band Gap) |
|---|---|
| a. Si | iv. $1.43 \, \text{eV}$ |
| b. Ge | ii. $1.12 \, \text{eV}$ |
| c. GaAs | iii. $0.7 \, \text{eV}$ |
| d. SiC | i. $3.3 \, \text{eV}$ |
This specific pairing represents the solution provided by Option D.
| LIST-I | LIST-II |
| A. BJT | I. Five layers and four junction device |
| B. MOSFET | II. Power switching device with fast acting features and high power capability with voltage control features |
| C. IGBT | III. Voltage controlled device |
| D. DIAC | IV. Current controlled device |
The common drain circuit has a FET with $Y_{fs}$=3000 µS, $R_{gs}$=100 MΩ and $r_d$=50 KΩ. Determine the device input impedance. 