List - I List - II a. Si-band gap i. 3.3 eV b. Ge-band gap ii. 1.12 eV c. Ga As band gap iii. 0.7 eV d. Si C band gap iv. 1.43 eV
Codes :
Matching Semiconductor Band Gaps
The task is to match semiconductors listed in List I with their corresponding band gap energies from List II.
Semiconductor Band Gap Matching
Based on Option D, the matching is as follows:
| List I (Semiconductor) | List II (Band Gap) |
|---|---|
| a. Si | iv. $1.43 \, \text{eV}$ |
| b. Ge | ii. $1.12 \, \text{eV}$ |
| c. GaAs | iii. $0.7 \, \text{eV}$ |
| d. SiC | i. $3.3 \, \text{eV}$ |
This specific pairing represents the solution provided by Option D.
Important Questions from Semiconductor Materials
Which of the following IS a pentavalent impurity?
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
The outermost orbit of a Germanium atom has ________ electrons.
P-type extrinsic semiconductor doped with impurity having how much valence electron?
All semiconductors in their last orbit have
