List - I List - II a. MOSFET i. $I_{dss} \left(1 - \frac{V_{gs}}{V_p}\right)^2$ b. JFET ii. $K \frac{W}{L} (V_{gs} - V_{th})V_{ds}$ c. PN Junction diode iii. $I_o \left(e^{\frac{qV}{kT}} - 1\right)$ d. BJT iv. $\beta = \frac{I_C}{I_B}$
Codes :
Match Semiconductor Devices with Equations
The question requires matching electronic components from List I (MOSFET, JFET, PN Junction Diode, BJT) to their characteristic equations or parameters found in List II.
Correct Device-Equation Pairings
Based on the provided correct answer, the following pairings are established:
- a. MOSFET: Matched with i. \( I_{dss} \left(1 - \frac{V_{gs}}{V_p}\right)^2 \)
- b. JFET: Matched with iii. \( I_o \left(e^{\frac{qV}{kT}} - 1\right) \)
- c. PN Junction Diode: Matched with ii. \( K \frac{W}{L} (V_{gs} - V_{th})V_{ds} \)
- d. BJT: Matched with iv. \( \beta = \frac{I_C}{I_B} \)
Conclusion
The matching derived from the correct answer is: a - i, b - iii, c - ii, d - iv.
This corresponds to Option B.
Important Questions from Device Technology
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As per the standards set by the Department of Telecom, Government of India, for all the new designs of mobile handsets, the permissible Specific Absorption Rate (SAR) limit is _______ averaged over 1 gram of human tissue with effect from 1st September 2012.
In a silicon oxidation model, \(\rm \frac{B}{A}\) is the linear rate constant and τ accounts for the shift in the time coordinate to account for the presence of the initial oxide layer, then the linear law is represented as:
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A. Identify the symptoms and make a careful visual and tactical inspection.
B. Check the power supply.
C. Switch OFF and ON the system.
D. Check the control signals such as
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Choose the correct answer from the options given below:
