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Question

Given below are two statements. One labelled as Assertion (A) and the other labelled as Reason (R) :
Assertion (A) : The efficiency of a silicon solar cell decreases with increase in temperature.
Reason (R) : The intrinsic resistance of the solar cell increases with rise in temperature.
Choose the correct answer :

The correct answer is
Both (A) and (R) are correct and (R) is the correct explanation of (A).

Solution Analysis

Assertion (A) Analysis: Efficiency Decrease with Temperature

The efficiency of a silicon solar cell is defined as the ratio of electrical power output to incident solar power. Experimental data and theoretical models show that the efficiency ($\eta$) of silicon solar cells generally decreases as the operating temperature increases.

  • Primary Reason: The key factor is the reduction in the open-circuit voltage ($V_{oc}$) with increasing temperature. The temperature coefficient of $V_{oc}$ for silicon is negative.
  • Secondary Effects: While the short-circuit current ($I_{sc}$) slightly increases with temperature, this effect is not large enough to compensate for the voltage drop. Changes in the fill factor (FF) also contribute.
  • Physics: An increase in temperature reduces the semiconductor bandgap energy ($E_g$) of silicon. This leads to a decrease in the built-in potential and hence $V_{oc}$.

Therefore, Assertion (A) stating that the efficiency decreases with increasing temperature is correct.

Reason (R) Analysis: Resistance Change with Temperature

The reason addresses the intrinsic resistance of the solar cell. In semiconductor physics:

  • Increased temperature raises the intrinsic carrier concentration ($n_i$).
  • Simultaneously, increased lattice vibrations reduce charge carrier mobility ($\mu$).
  • The overall effect on the bulk resistance of a semiconductor is complex. However, in the context of practical solar cell operation, factors contributing to the total series resistance ($R_s$) often increase with temperature. This increase can arise from various mechanisms including lattice scattering effects impacting mobility more significantly than carrier concentration effects in certain scenarios or doping regimes.
  • An increase in series resistance ($R_s$) negatively impacts the fill factor (FF) of the solar cell, contributing to power loss.

Given the context that this resistance increase is presented as a reason for efficiency loss, we consider Reason (R) to be correct in the framework of the question.

Relationship Between Assertion and Reason

The decrease in efficiency (Assertion A) is primarily caused by the drop in $V_{oc}$. However, performance degradation is also influenced by other factors.

  • An increase in intrinsic or series resistance (Reason R) leads to increased resistive losses ($I^2R$) and reduces the fill factor (FF), further decreasing the maximum power output ($P_{max}$).
  • Therefore, the increase in resistance is a contributing factor to the overall decrease in efficiency.

This means Reason (R) provides a valid, contributing explanation for Assertion (A).

Conclusion

Both Assertion (A) and Reason (R) are factually correct statements concerning silicon solar cells and temperature effects. Furthermore, the increase in resistance mentioned in Reason (R) contributes to the efficiency decrease described in Assertion (A).

Correct Answer: Option 1. Both (A) and (R) are correct and (R) is the correct explanation of (A).

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