Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R Assertion A: In a photodetector, it is desired that the width of the depletion region W be large enough so that most of the photons are absorbed within W rather than in the neutral n and p regions. Reason R: A wider width W results in small junction capacitance. In the light of the above statements, choose the most appropriate answer from the options given below
Assertion A states that a large depletion region width (W) is desired in a photodetector.
Reason R states that a wider depletion region width (W) leads to small junction capacitance.
Both Assertion A and Reason R are independently correct statements:
Since both statements are true but Reason R does not explain the primary reason behind Assertion A, the correct option is that both are correct, but R is not the correct explanation for A.
Consider the following statements :
(A) The charge coupled device (CCD) is a linear scanning system
(B) The charge coupled device is a non linear scanning system
(C) A charge coupled devices is used as a shift register
(D) A charge coupled device can not be used as a photo detector
Choose the most appropriate answer from the options given below :
Consider the following statements for photo diode (PD) and Avalanche Photo Diode (APD)
A. The response time of APD is larger than PD
B. Photo current is a diffusion current for PD and APD
C. APD can handle greater amount of power in comparison to PD
D. Photo current is a minority carrier current for PD and APD
E. compare to ordinary pn diode, power handling capacity of PD is higher.
Choose the correct answer from the options given below :
In case a reverse biased photodiode is kept in dark condition, the current flowing through the device corresponds to:
Given below are two statements :
Statement I : In case a reverse biased photodiode is kept in a open light, the current flowing through the device corresponds to value of reverse saturation current.
Statement II : Photovoltaic emf of semiconductor photodiode is that voltage at which the resultant current flowing the device becomes zero.
In the light of the above statement, choose the most appropriate answer from the options given below :
In a p-i-n photodiode the depletion region thickness can be tailored to
(a) optimize the quantum efficiency
(b) optimize the frequency response
(c) optimize the quantum efficiency but not the frequency response.
(d) optimize the frequency response but not the quantum efficiency.
Out of these