Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R Assertion A: In a $p^+-n$ junction, the depletion width is larger for n-side as compared to p-side. Reason R: As doping concentration increases, the depletion width reduces. In the light of the above statements, choose the most appropriate answer from the options given below
The question asks to evaluate two statements, Assertion A and Reason R, regarding a $p^+-n$ junction and choose the correct option.
In a semiconductor junction, the depletion width on each side ($W_n$ for n-side, $W_p$ for p-side) is inversely related to the square root of the doping concentration on that side, assuming the built-in potential and permittivity are constant. Specifically:
For a $p^+-n$ junction, the doping concentration on the p-side ($N_A$) is much greater than the doping concentration on the n-side ($N_D$), i.e., $N_A \gg N_D$. This implies:
Therefore, $W_n > W_p$. The depletion width is indeed larger on the n-side (less doped) compared to the p-side (heavily doped). Assertion A is correct.
The depletion width ($W$) of a $p-n$ junction is given by $W = W_n + W_p$. The expressions for $W_n$ and $W_p$ show an inverse relationship with the doping concentrations ($N_D$ and $N_A$). For instance, $W_n \approx \sqrt{\frac{2 \epsilon_s (V_{bi} - V)}{q N_D}}$ and $W_p \approx \sqrt{\frac{2 \epsilon_s (V_{bi} - V)}{q N_A}}$ (under certain approximations). If the doping concentration on either side increases, the corresponding depletion width decreases. Thus, as doping concentration increases, the depletion width reduces. Reason R is correct.
Assertion A states that the depletion width is larger on the n-side than the p-side in a $p^+-n$ junction. This is because the n-side is lightly doped ($N_D$) while the p-side is heavily doped ($N_A \gg N_D$). Reason R explains the general principle that higher doping concentration leads to a reduced depletion width. Since the p-side is heavily doped, its depletion width is smaller, and conversely, the lightly doped n-side has a larger depletion width. Therefore, Reason R correctly explains why Assertion A is true. R is the correct explanation of A.
Both Assertion A and Reason R are correct statements, and Reason R provides the correct explanation for Assertion A.
In a semiconductor diode, the cut-in voltage is the voltage:
The leakage current in a pn junction is of the order of:
Diode junction breakdowns above 5 V are caused by:
The width of the depletion layer in a P-N junction diode
ln a p-n junction diode the forward current