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Question

Find the Transconductance $g_m$ for JFET at $\Delta V_{GS}$ = 1.25 V and $\Delta I_D$ =4.3 mA

The correct answer is
3.4 mA/V

JFET Transconductance Calculation Explained

Transconductance ($g_m$) is a fundamental parameter for JFETs (Junction Field-Effect Transistors). It measures how effectively the gate-source voltage ($V_{GS}$) controls the drain current ($I_D$). A higher transconductance signifies that a small change in $V_{GS}$ results in a larger change in $I_D$. Understanding JFET transconductance is key to analyzing JFET amplifier circuits.

The Transconductance Formula

The transconductance ($g_m$) is mathematically defined as the ratio of the change in drain current ($\Delta I_D$) to the change in gate-source voltage ($\Delta V_{GS}$) applied, assuming other operating conditions remain constant. The formula is:

$g_m = \frac{\Delta I_D}{\Delta V_{GS}}$

Given Parameters for JFET

From the question, we have the following specific values related to the JFET operation:

  • The change in Drain Current, $\Delta I_D = 4.3 \text{ mA}$
  • The change in Gate-Source Voltage, $\Delta V_{GS} = 1.25 \text{ V} $

Calculating the Transconductance ($g_m$)

To find the JFET transconductance, we substitute the given values into the formula:

  1. Write down the formula for transconductance:

    $g_m = \frac{\Delta I_D}{\Delta V_{GS}}$

  2. Insert the provided values for $\Delta I_D$ and $\Delta V_{GS}$:

    $g_m = \frac{4.3 \text{ mA}}{1.25 \text{ V}}$

  3. Compute the result by dividing the current change by the voltage change:

    $g_m = 3.44 \text{ mA/V}$

The calculation yields a transconductance value of $3.44 \text{ mA/V}$.

Matching with Options

Let's compare our calculated value ($3.44 \text{ mA/V}$) with the provided options:

  • Option 1: 3.4 mA/V
  • Option 2: 2.3 mA/V
  • Option 3: 4.8 mA/V
  • Option 4: 2.8 mA/V

The calculated value $3.44 \text{ mA/V}$ is approximately equal to $3.4 \text{ mA/V}$. This value closely matches Option 1.

Therefore, the Transconductance ($g_m$) for the JFET is determined to be 3.4 mA/V.

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Important Questions from Field Effect Transistors

  1. The vertical threshold sensitivity of HEMTs are dependent on :
    (I) The metal semiconductor schottky barrier potential between Al and GaAs.
    (II) The dielectric constant of AlGaAs.
    (III) The donor concentration.
    (IV) The thickness of AlGaAs layer
    Choose the correct option from the list given below.
  2. In an FET, following characteristics are given :

    1. JFET is called as variable current resistor.
    2. JFET is called Voltage variable resistor.
    3. \(g_{d}=g_{d0}\left(1-\dfrac{V_{GS}}{V_{P}}\right)\), where gd0 is value of drain to source conductance for zero bias.
    4. \(g_{d}=g_{d0}\left(1+\dfrac{V_{GS}}{V_{P}}\right)^{2}\)

    Which one of the following is true ?

  3. Transfer characteristics for n-channel FET as a function of temperature T is shown in the figure

    Choose the correct answer from the options given below :

  4. When gate to source voltage of a FET changes from –5.2 volt to –5 volts, the corresponding drain current changes from 1 mA to 1.3 mA, the transconductance is

  5. In a JFET the gate to source voltage is given as

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