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Question

Assertion (A) : MOSFET can be used to drive high current and high voltage networks without drawing current or power from the driving circuits.
Reason (R) : The high input impedances of FET essentially isolates the two parts of the network without the need of optical or electromagnetic linkages.

The correct answer is
Both (A) and (R) are true, but (R) is not the correct explanation of (A).

MOSFET Driving Capability Analysis (A)

The assertion posits that a MOSFET can effectively drive networks handling high currents and voltages while drawing negligible power from the control circuitry.

  • MOSFETs function as voltage-controlled devices.
  • Their gate terminal exhibits very high input impedance, created by an insulating layer.
  • Consequently, only a minimal gate current is necessary to command a substantial drain current.
  • The driving circuit primarily needs to provide the control voltage, consuming very little power ($P = V_{gate} \times I_{gate}$, where $I_{gate}$ is extremely small).
  • Therefore, Assertion (A) is accurate.

FET Input Impedance Explained (R)

The reason highlights the extremely high input impedance characteristic of FETs, which isolates the input and output sections of a circuit without requiring intermediary devices.

  • Field-Effect Transistors (FETs) possess exceptionally high input impedance.
  • This inherent property creates significant electrical isolation between the gate (input) and the drain/source (output).
  • This isolation is fundamental to the FET's structure.
  • Therefore, Reason (R) is also accurate.

Assertion-Reason Linkage

Both statements (A) and (R) are factually correct regarding MOSFETs. However, according to the provided correct answer, Reason (R) is not considered the correct explanation for Assertion (A). While the high input impedance is related to the low power draw, the question's logic classifies this relationship as not being the direct explanation.

Final Answer: The final answer is Option B

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Important Questions from Field Effect Transistors

  1. FET is like a switched on condition when it operates in ______ mode.

  2. Which of the following is the characteristic of Field-effect transistor?

  3. When VDS is the drain voltage and VDS(max) is the maximum drain voltage, the JFET will breakdown if:

  4. Which of the following is true about the transconductance of a MOSFET in saturation (I Dis the Drain Current)?

  5. Transconductance in an FET indicates how effectively the input voltage controls the

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