All Exams Test series for 1 year @ ₹349 only
Question

Arrange the following in descending order of their switching times:

(A) Schottky diodes

(B) Power transistor (Darlington)

(C) IGBT

(D) Trine

Choose the correct answer from the options given below:

The correct answer is

(D), (B), (C), (A)

Analyzing Switching Times of Power Semiconductor Devices

The question asks us to arrange different power electronic devices in descending order of their switching times. Descending order means starting with the device that takes the longest time to switch (slowest) and ending with the device that takes the shortest time to switch (fastest).

Switching time is a crucial parameter for power electronic devices, affecting efficiency and switching losses. Different types of devices have vastly different switching characteristics.

Understanding the Switching Characteristics

Let's look at the typical switching time ranges for the devices mentioned:

  • Schottky Diodes (A): These are majority carrier devices. They have extremely fast switching times, typically in the range of a few nanoseconds (ns). There is virtually no reverse recovery charge.
  • Power Transistor (Darlington) (B): A Darlington configuration consists of two bipolar junction transistors (BJTs) connected to achieve high current gain. While BJTs are faster than some other devices like Triacs, the Darlington configuration, due to storage time in both transistors, tends to be slower than a single BJT or an IGBT. Switching times are typically in the low microseconds ($\mu$s).
  • IGBT (Insulated Gate Bipolar Transistor) (C): IGBTs combine the advantages of MOSFETs (high input impedance, voltage-controlled) and BJTs (low conduction drop in the ON state). They are generally faster than power BJTs (including Darlingtons) and Triacs but slower than MOSFETs and Schottky diodes. Switching times are typically in the range of tens of nanoseconds to a few hundred nanoseconds, or low microseconds ($\mu$s). The turn-off time often involves a tail current, which can prolong the effective switching time compared to pure MOSFETs.
  • Triac (D): A Triac is a bidirectional switch based on thyristor technology. It is designed primarily for AC power control. Triacs are generally much slower than transistors (BJTs, MOSFETs, IGBTs) or diodes, especially regarding turn-off time (commutation time). Switching times can be in the microseconds ($\mu$s) range, often tens of microseconds, particularly the turn-off time dependent on external circuit conditions (commutation).

Comparing Switching Speeds

Comparing the typical switching speed ranges:

  • Schottky Diodes (A): Few ns (Very Fast)
  • Power Transistor (Darlington) (B): Low $\mu$s (Faster than Triac/IGBT, slower than Schottky)
  • IGBT (C): ns to low $\mu$s (Faster than Triac, often faster than Darlington, slower than Schottky)
  • Triac (D): $\mu$s, potentially tens of $\mu$s (Slowest)

Putting these in descending order of switching time (slowest to fastest):

  1. Triac (D) - Slowest
  2. Power Transistor (Darlington) (B)
  3. IGBT (C)
  4. Schottky Diodes (A) - Fastest

Therefore, the descending order of switching times is (D), (B), (C), (A).

Final Arrangement

Based on the analysis of switching times, the correct descending order is:

(D) Triac > (B) Power transistor (Darlington) > (C) IGBT > (A) Schottky diodes

Revision Table: Power Device Switching Times

Device Type Symbol Typical Switching Time Range Relative Speed
Schottky Diode <img src="schottky_symbol.png" alt="Schottky Diode Symbol" width="50"/> < 100 ns (ns) Very Fast
Power Transistor (Darlington) <img src="darlington_symbol.png" alt="Darlington Pair Symbol" width="80"/> 1 - 10 μs Medium Slow
IGBT <img src="igbt_symbol.png" alt="IGBT Symbol" width="50"/> 100 ns - few μs Fast to Medium Fast
Triac <img src="triac_symbol.png" alt="Triac Symbol" width="50"/> 10 - 100 μs (especially turn-off) Slowest

Additional Information on Power Electronic Device Switching

Switching time is a critical parameter influencing the power losses in switching applications. Faster switching generally leads to lower switching losses but can increase electromagnetic interference (EMI). The switching time of a device is typically characterized by several parameters, including turn-on time, rise time, turn-off time, fall time, and storage time.

  • Schottky diodes have minimal storage time due to majority carrier conduction, making them ideal for high-frequency rectification.
  • Bipolar Junction Transistors (BJTs) and Darlington pairs have significant storage time, which is the main component contributing to their turn-off time and limiting their switching frequency compared to MOSFETs.
  • IGBTs also exhibit storage time, which contributes to a "current tail" during turn-off, affecting efficiency at very high frequencies. However, they offer a good balance of conduction loss and switching loss for medium to high-power applications.
  • Triacs are designed for AC phase control at line frequency (50/60 Hz). Their switching characteristics, particularly turn-off (commutation), are relatively slow and highly dependent on the AC voltage and load characteristics. They are not suitable for high-frequency switching applications.

Understanding the switching speed limitations of these devices is essential for selecting the right component for a specific power electronic application, such as DC-DC converters, inverters, or AC controllers.

Was this answer helpful?

Important Questions from Diodes and Its Applications - Teaching

  1. What is the most distinctive feature of a tunnel diode's current-voltage ($I-V$) characteristic?
  2. The electronic circuit that converts AC to DC where the DC output peak value can be greater than the AC input peak value is -

  3. Which of the following statements are correct?

    A. Schottky barriers are established by depositing a metal, such as Tungsten, on a p‐type channel.

    B. The transfer characteristics of a depletion type MESFET are similar to those of a depletion type MOSFET.

    C. Maximum operating conditions are determined by the product of drain‐to‐source voltage and drain current.

    D. A complimentary MOSFET has negligibly small input impedance.

    Choose the correct answer from the options given below:

  4. Arrange the following in decreasing order of the noise generated by them:

    (A) Diode

    (B) Transistor

    (C) Avalanche photo diode

    (D) FET

    Choose the correct answer from the options given below:

  5. The Schottky effect is the image force induced lowering of the potential energy for charge carrier emission when an electric field is applied. The attractive force called image force is:

Need Expert Advice?

Start Your Preparation with Prepp Mobile App

Download the app from Google Play & App Store
Download the app from Google Play & App Store
Prepp Mobile App