Arrange in terms of ascending order of band gap. A. Si B. GaN C. InSb D. GaAs E. AlAs Choose the correct answer from the options given below:
Ordering Semiconductors by Band Gap
This solution determines the ascending order of band gap energy for the given semiconductor materials: Si, GaN, InSb, GaAs, and AlAs.
Semiconductor Band Gap Values
| Material | Symbol | Approximate Band Gap Energy (at 300K) |
| Indium Antimonide | C | $ \approx 0.17 $ eV |
| Silicon | A | $ \approx 1.12 $ eV |
| Gallium Arsenide | D | $ \approx 1.42 $ eV |
| Aluminum Arsenide | E | $ \approx 2.16 $ eV |
| Gallium Nitride | B | $ \approx 3.4 $ eV |
Determining Ascending Band Gap Order
Arranging the materials based on the band gap values from smallest to largest:
- Smallest Band Gap: InSb (C) at $ \approx 0.17 $ eV
- Next Smallest: Si (A) at $ \approx 1.12 $ eV
- Next: GaAs (D) at $ \approx 1.42 $ eV
- Next: AlAs (E) at $ \approx 2.16 $ eV
- Largest Band Gap: GaN (B) at $ \approx 3.4 $ eV
Final Correct Order
The sequence of materials in ascending order of their band gap energy is C, A, D, E, B.
Important Questions from Semiconductor Materials
Which of the following IS a pentavalent impurity?
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?
The outermost orbit of a Germanium atom has ________ electrons.
P-type extrinsic semiconductor doped with impurity having how much valence electron?
All semiconductors in their last orbit have
