Question
Arrange in terms of ascending order of band gap. A. Si B. GaN C. InSb D. GaAs E. AlAs Choose the correct answer from the options given below:
The correct answer is
C, A, D, E, B
Ordering Semiconductors by Band Gap
This solution determines the ascending order of band gap energy for the given semiconductor materials: Si, GaN, InSb, GaAs, and AlAs.
Semiconductor Band Gap Values
| Material | Symbol | Approximate Band Gap Energy (at 300K) |
| Indium Antimonide | C | $ \approx 0.17 $ eV |
| Silicon | A | $ \approx 1.12 $ eV |
| Gallium Arsenide | D | $ \approx 1.42 $ eV |
| Aluminum Arsenide | E | $ \approx 2.16 $ eV |
| Gallium Nitride | B | $ \approx 3.4 $ eV |
Determining Ascending Band Gap Order
Arranging the materials based on the band gap values from smallest to largest:
- Smallest Band Gap: InSb (C) at $ \approx 0.17 $ eV
- Next Smallest: Si (A) at $ \approx 1.12 $ eV
- Next: GaAs (D) at $ \approx 1.42 $ eV
- Next: AlAs (E) at $ \approx 2.16 $ eV
- Largest Band Gap: GaN (B) at $ \approx 3.4 $ eV
Final Correct Order
The sequence of materials in ascending order of their band gap energy is C, A, D, E, B.
Was this answer helpful?
Important Questions from Semiconductor Materials
- Match the LIST-I with LIST-IIChoose the correct answer from the options given below:
LIST-I LIST-II A. BJT I. Five layers and four junction device B. MOSFET II. Power switching device with fast acting features and high power capability with voltage control features C. IGBT III. Voltage controlled device D. DIAC IV. Current controlled device - A silicon solar cell has a short-circuit current of 100mA and an open circuit voltage of 0.8V under full solar illumination. The fill factor is given as 0.7, what is the maximum power delivered to a load by the cell?
The common drain circuit has a FET with $Y_{fs}$=3000 µS, $R_{gs}$=100 MΩ and $r_d$=50 KΩ. Determine the device input impedance.
- A solar cell consists of 400 cells with 40 elements series connected while 10 elements are parallely connected. If each cell can produce an output voltage and current of $V_o$=0.45 V and $I_o$=57 mA, the maximum charging voltage required is
- Given below are the two statements
I. Graphene in its purest and defect free form has electrical conductivity lesser than that of Gold and Copper
II. It is possible to develop graphene in the form of nano-ribbons and quantum dots
Choose the correct option from the list given below.
Need Expert Advice?
