Arrange in terms of ascending order of band gap. A. Si B. GaN C. InSb D. GaAs E. AlAs Choose the correct answer from the options given below:
This solution determines the ascending order of band gap energy for the given semiconductor materials: Si, GaN, InSb, GaAs, and AlAs.
| Material | Symbol | Approximate Band Gap Energy (at 300K) |
| Indium Antimonide | C | $ \approx 0.17 $ eV |
| Silicon | A | $ \approx 1.12 $ eV |
| Gallium Arsenide | D | $ \approx 1.42 $ eV |
| Aluminum Arsenide | E | $ \approx 2.16 $ eV |
| Gallium Nitride | B | $ \approx 3.4 $ eV |
Arranging the materials based on the band gap values from smallest to largest:
The sequence of materials in ascending order of their band gap energy is C, A, D, E, B.
Which of the following is NOT an advantage of a hot carrier diode?
Silicon Controlled Rectifier (SCR) is usually turned on by
The forbidden energy gap for germanium is
Which of the following is NOT an example of a semiconductor material?
In an N-type semiconductor, there are