An electron in the conduction band
Has higher energy than an electron in the valence band
In solid materials, particularly semiconductors and conductors, electrons occupy specific energy levels that are grouped into bands. The two most important bands for electrical properties are the valence band and the conduction band.
The valence band represents the range of energy levels occupied by the valence electrons. These are the electrons involved in bonding between atoms and are typically bound, meaning they are not free to move throughout the material to conduct electricity.
The conduction band is the lowest electron energy band that is still empty or partially filled at absolute zero temperature. Electrons in the conduction band are delocalized and are free to move within the crystal lattice, enabling electrical current flow.
Between the valence band and the conduction band, there is an energy range where no electron states can exist. This is called the band gap, often denoted as $E_g$.
For an electron to move from the valence band to the conduction band, it must gain enough energy to overcome this band gap. This energy can come from sources like thermal energy (heat) or electromagnetic radiation (light).
Mathematically, if $E_v$ is the energy at the top of the valence band and $E_c$ is the energy at the bottom of the conduction band, the band gap is $E_g = E_c - E_v$. An electron transitions from the valence band to the conduction band when it absorbs energy $\Delta E \geq E_g$.
Consequently, an electron that has successfully transitioned into the conduction band must possess energy at least equal to $E_c$. Since $E_c > E_v$, any electron residing in the conduction band has inherently absorbed energy and therefore has a higher energy level compared to electrons that remain bound within the valence band.
For an intrinsic semiconductor at temperature 𝑇 = 0 𝐾, which of the following statement is true?
Which one of the following element has Forbidden energy band approximately equal to 6 eV?
The bandgap of Si at 300 K is:
Which of the following is an intrinsic semiconductor?