The problem asks for the electron concentration (n) in a conducting line on an IC chip, given its physical dimensions, the current flowing through it, the voltage drop across it, and the electron mobility.
The cross-sectional area (A) is the product of width and thickness:
A = W $\times$ T = (1 $\times$ 10-6 m) $\times$ (4 $\times$ 10-6 m) = 4 $\times$ 10-12 m2
The current density (J) is related to conductivity ($\sigma$), electron concentration (n), elementary charge (q), electron mobility ($\mu_n$), and electric field (E) by:
J = $\sigma E$ = (n q $\mu_n$) ($V/L$)
Current density is also defined as J = I / A. Equating the two expressions for J:
$\frac{I}{A} = n q \mu_n \frac{V}{L}$
Rearrange the formula to solve for n:
n = $\frac{I L}{A q \mu_n V}$
Substitute the given and calculated values into the formula:
n = $\frac{(5 \times 10^{-3} \text{ A}) \times (2.8 \times 10^{-3} \text{ m})}{(4 \times 10^{-12} \text{ m}^2) \times (1.602 \times 10^{-19} \text{ C}) \times (5 \times 10^{-2} \text{ m}^2/\text{V.s}) \times (0.1 \text{ V})}$
n = $\frac{14 \times 10^{-6}}{3.204 \times 10^{-33}}$ m-3
n $\approx$ 4.3695 $\times$ 1027 m-3
Since the options are in cm-3, convert the result:
1 m-3 = 10-6 cm-3
n $\approx$ 4.3695 $\times$ 1027 $\times$ 10-6 cm-3
n $\approx$ 4.3695 $\times$ 1021 cm-3
This value is approximately 4.38 $\times$ 1021 cm-3.
Given below are two statements :
Statement I : Concentration of acceptor atoms in the region between isolation islands in a monolythic integrated circuit will be much higher then in a p-type substrate.
Statement II : The higher density is provided to prevent the depletion region of the reverse biased isolation to substrate junction from extending into the p+ type material.
In the light of the above statements, choose the most appropriate answer from the options given below :
Arrange the following fabrication steps in order needed to fabricate the IC :
(a) Oxidation (b) Etching (c) Metallization (d) Epitaxial growth
Codes :
Assertion (A) : In a bipolar IC fabrication, the diode isolation is used to isolate one device from the other.
Reason (R) : P+n diode used as isolation diode in IC fabrication.
Select your answer using the codes given below.
Assertion (A) : The epitaxial layer growth possesses the same crystal structure to that of the substrate on which it is grown.
Reason (R) : It can only be of similar conductivity type but possesses different value of resistivity to that of the substrate.
Select your answer using the codes given below.
In an npn diffused junction transistor, the p-type base region is formed on the n-type collector region through the process of :