UGC NET 2017 Paper 3 Electronic Science Prev Year Paper (05-Nov-2017)

Question 1

In the zone refining process if K is the distribution coefficient, C Srepresents the concentration of dopant in the solid phase and C Lrepresents the concentration of dopant in the liquid phase then K is defined as:

Accepted Answer

K = C S/C L

Answer

K = C L/C S

Answer

$K = \frac{{{C_S}}}{{{C_L}}} + 1$

Answer

$K = \frac{{{C_L}}}{{{C_S}}} - 1$

Question 2

Barrier height in a metal-semiconductor contact can easily be estimated from

Accepted Answer

$\left( {\frac{1}{{{C^2}}}} \right)$ versus V curve

Answer

$\left( {\frac{1}{C}} \right)$ versus V curve

Answer

$\left( {\frac{1}{C}} \right)$ versus I curve

Answer

$\left( {\frac{1}{{{C^2}}}} \right)$ versus I curve

Question 3

Two coils having equal resistances but different inductances (say L 1and L 2) having time constants &tau; 1and &tau; 2respectively, are connected in series. The time constant, &lsquo;&tau;&rsquo; of the series combination is:

Accepted Answer

$\tau = \frac{{{\tau _1} + {\tau _2}}}{2}$

Answer

&tau; = &tau; 1+ &tau; 2

Answer

$\tau = \frac{{{\tau _1}}}{{{\tau _2}}}$

Answer

&tau; = &tau; 1 &times; &tau; 2

Question 4

The RMS voltage measured across each of the circuit elements in the figure given below is shown. When the circuit is excited using a sinusoidal source &lsquo;e s&rsquo;, the RMS value of the source voltage &lsquo;e s&rsquo; is:

Accepted Answer

5 V

Answer

1 V

Answer

4 V

Answer

10 V

Question 5

For a given JFET, the typical values of amplification factor and transconductance are given as 40 and 100 &mu;S respectively. The dynamic drain resistance of JFET will be:

Accepted Answer

400 k&Omega;

Answer

200 &Omega;

Answer

400 &Omega;

Answer

200 k&Omega;

UGC NET 2017 Paper 3 Electronic Science Prev Year Paper (05-Nov-2017)

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