UGC NET Paper 2 Electronic Science Question Paper (21-Aug-2024) (Shift 1)

Question 1

With regard to the quantum efficiency of a Photodiode, which of the following is not correct?

Accepted Answer

The depletion region must be kept thin to reduce the transit time.

Answer

The depletion region must be sufficiently thick to allow a large fraction of incident light.

Answer

Germanium Photodiodes & Group III-V Photodiodes have high quantum efficiency

Answer

Silicon Photodiodes can reach 100% quantum efficiency near the 0.8-0.9 μm region with an antireflection coating.

Question 2

Compared with the GaAs and InP based HBTs, the Si/SiGe HBT has a lower cutoff frequency because of :

Accepted Answer

Lower mobilities in Si

Answer

Higher mobilities in Si

Answer

Lower mobilities in Ge

Answer

Higher mobilities in Ge

Question 3

The band gap of a semiconductor material that can be considered for making solar cell will be

Accepted Answer

Between 1 & 2 eV

Answer

<1 eV

Answer

Between 2 & 3 eV

Answer

>3 eV

Question 4

A silicon sample is doped with 10¹⁰ Arsenic atoms/cm³. What is the equilibrium hole concentration P₀ at 300°K if the intrinsic hole & electron concentration is nᵢ = 1.5 × 10¹⁰ atoms/cm³.

Accepted Answer

2.25 × 10¹⁰ cm⁻³

Answer

1.5 × 10¹⁰ cm⁻³

Answer

3.25 × 10¹⁰ cm⁻³

Answer

4.25 × 10¹⁰ cm⁻³

Question 5

The most important requirement of an effective metallization scheme in VLSI is that metal must adhere to the silicon in the window & to the oxide that defines the window. In this respect, which of the following metals in unlikely to be used directly on SiO₂?

Accepted Answer

W

Answer

Al

Answer

Ti

Answer

Ta

UGC NET Paper 2 Electronic Science Question Paper (21-Aug-2024) (Shift 1)

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